5th International Workshop on Crystal Growth Technology, Berlin, Germany, 26 June-30 June 2011UECKER, Reinhard; BLISS, David F; GANSCHOW, Steffen et al.Journal of crystal growth. 2012, Vol 360, issn 0022-0248, 204 p.Conference Proceedings

Enhanced crystallization on porous silicon: Facts and modelsSTOLYAROVA, S; BASKIN, E; NEMIROVSKY, Y et al.Journal of crystal growth. 2012, Vol 360, pp 131-133, issn 0022-0248, 3 p.Conference Paper

Role of surface effects on silicon carbide polytype stabilityMERCIER, Frederic; NISHIZAWA, Shin-Ichi.Journal of crystal growth. 2012, Vol 360, pp 189-192, issn 0022-0248, 4 p.Conference Paper

State-of-the-art growth of silicon for PV applicationsARNBERG, Lars; DI SABATINO, Marisa; ØVRELID, Eivind J et al.Journal of crystal growth. 2012, Vol 360, pp 56-60, issn 0022-0248, 5 p.Conference Paper

Thermodynamic modeling of the LiF―YF₃ phase diagramDOS SANTOS, I. A; KLIMM, D; BALDOCHI, S. L et al.Journal of crystal growth. 2012, Vol 360, pp 172-175, issn 0022-0248, 4 p.Conference Paper

Modern trends in crystal growth and new applications of sapphireAKSELROD, Mark S; BRUNI, Frank J.Journal of crystal growth. 2012, Vol 360, pp 134-145, issn 0022-0248, 12 p.Conference Paper

Purification of silicon for photovoltaic applicationsDELANNOY, Yves.Journal of crystal growth. 2012, Vol 360, pp 61-67, issn 0022-0248, 7 p.Conference Paper

Bulk PPKTP by crystal growth from high temperature solutionPENA, A; MENAERT, B; BOULANGER, B et al.Journal of crystal growth. 2012, Vol 360, pp 52-55, issn 0022-0248, 4 p.Conference Paper

Grain control in directional solidification of photovoltaic siliconLAN, C. W; LAN, W. C; LEE, T. F et al.Journal of crystal growth. 2012, Vol 360, pp 68-75, issn 0022-0248, 8 p.Conference Paper

Growth of eutectic ceramic structures by directional solidification methodsORERA, V. M; PENA, J. I; OLIETE, P. B et al.Journal of crystal growth. 2012, Vol 360, pp 99-104, issn 0022-0248, 6 p.Conference Paper

Analysis of the practical stability of dewetted Bridgman growth of GaAsEPURE, Simona; DUFFAR, Thierry.Journal of crystal growth. 2012, Vol 360, pp 25-29, issn 0022-0248, 5 p.Conference Paper

Problems and recent advances in melt crystal growth technologyZHARIKOV, Evgeny V.Journal of crystal growth. 2012, Vol 360, pp 146-154, issn 0022-0248, 9 p.Conference Paper

Characterization of mc-Si directionally solidified in travelling magnetic fieldsKIESSLING, F.-M; BÜLLESFELD, F; DROPKA, N et al.Journal of crystal growth. 2012, Vol 360, pp 81-86, issn 0022-0248, 6 p.Conference Paper

High temperature top seeded solution growth of stoichiometric lithium niobate LiNbO₃ (sLN) with planar interfaceSZALLER, Zs; PETER, A; POLGAR, K et al.Journal of crystal growth. 2012, Vol 360, pp 181-184, issn 0022-0248, 4 p.Conference Paper

Polytype-selective growth of SiC by supersaturation control in solution growthSEKI, Kazuaki; ALEXANDER; KOZAWA, Shigeta et al.Journal of crystal growth. 2012, Vol 360, pp 176-180, issn 0022-0248, 5 p.Conference Paper

Crystal growth of rutile by tilting-mirror-type floating zone methodWATAUCHI, Satoshi; RAZZAQUE SARKER, Abdur; NAGAO, Masanori et al.Journal of crystal growth. 2012, Vol 360, pp 105-110, issn 0022-0248, 6 p.Conference Paper

Czochralski growth techniques of germanium crystals grown from a melt covered partially or fully by liquid B₂O₃TAISHI, Toshinori; HASHIMOTO, Yoshio; ISE, Hideaki et al.Journal of crystal growth. 2012, Vol 360, pp 47-51, issn 0022-0248, 5 p.Conference Paper

Float-Zone silicon crystal growth at reduced RF frequenciesROST, H.-J; MENZEL, R; LUEDGE, A et al.Journal of crystal growth. 2012, Vol 360, pp 43-46, issn 0022-0248, 4 p.Conference Paper

Heat distribution during melting and solidification of NaI(Tl) using skull techniqueTARANYUK, V; GEKTIN, A; KISIL, I et al.Journal of crystal growth. 2012, Vol 360, pp 95-98, issn 0022-0248, 4 p.Conference Paper

Nonlinear model-based control of the Czochralski process III: Proper choice of manipulated variables and controller parameter schedulingNEUBERT, M; WINKLER, J.Journal of crystal growth. 2012, Vol 360, pp 3-11, issn 0022-0248, 9 p.Conference Paper

Numerical investigation of oxygen impurity distribution during multicrystalline silicon crystal growth using a gas flow guidance deviceTENG, Ying-Yang; CHEN, Jyh-Chen; LU, Chung-Wei et al.Journal of crystal growth. 2012, Vol 360, pp 12-17, issn 0022-0248, 6 p.Conference Paper

Structural and surface topography analysis of AlN single crystals grown on 6H―SiC substratesSUMATHI, R. R; BARZ, R. U; STRAUBINGER, T et al.Journal of crystal growth. 2012, Vol 360, pp 193-196, issn 0022-0248, 4 p.Conference Paper

Influence of solid―liquid interface shape on striations during CZ InSb single crystal growth in ultrasonic fieldsKOZHEMYAKIN, G. N.Journal of crystal growth. 2012, Vol 360, pp 35-37, issn 0022-0248, 3 p.Conference Paper

Three-dimensional simulation and analysis of heat transfer and flow field in micro-floating zone of LHPG with asymmetrical perturbationCHEN, Peng-Yi; HUANG, En-Ping; LO, Chia-Yao et al.Journal of crystal growth. 2012, Vol 360, pp 111-118, issn 0022-0248, 8 p.Conference Paper

Effects of static magnetic fields on thermal fluctuations in the melt of industrial CZ-Si crystal growthXIN LIU; LIJUN LIU; ZAOYANG LI et al.Journal of crystal growth. 2012, Vol 360, pp 38-42, issn 0022-0248, 5 p.Conference Paper